Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.
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Dielectric breakdown and avalanches at nonequilibrium metal-insulator transitions.
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Authors:
Address: LASSP, Physics Department, Cornell University, Ithaca, New York 14853-2501, USA.
Journal:
Publication:
Motivated by recent experiments on the finite temperature Mott transition in VO(2) films, we propose a classical coarse-grained Dielectric breakdown model where each degree of freedom represents a nanograin which transitions from insulator to metal with increasing temperature and voltage at random thresholds due to quenched disorder. We describe the properties of the resulting nonequilibrium metal-insulator transition and explain the universal characteristics of the resistance jump distribution. We predict that by tuning voltage, another critical point is approached, which separates a phase of boltlike avalanches from percolationlike ones.
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